Surface defects and local strain in polished silicon by transmission electron microscopy

Tomohiro Saito, Yasuo Doke, Yoshihisa Sakaida, Yuichi Ikuhara

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Surface defects and local strain in polished silicon were characterized by cross-sectional transmission electron microscopy (XTEM) and convergent beam electron diffraction (CBED). Dislocations are introduced from the surface by polishing with diamond slurry, and their main slip system was found to be l/2<101>{lll}. The depth of the dislocation-introduced zone deepens with increasing diamond particle size, however, the density of dislocations is fairly high for materials polished with particles of small size. This is because the stress between particle and surface increases with increasing particle size, and the particle density increases with decreasing particle size. Local strain remains up to a depth of 1-1.5 pm beneath the surface for samples polished with 0.5 to 6 pm diamond slurry. This residual stress is distributed approximately 1 pm below the dislocation-introduced zone.

    Original languageEnglish
    Pages (from-to)3198-3203
    Number of pages6
    JournalJapanese journal of applied physics
    Volume34
    Issue number6R
    DOIs
    Publication statusPublished - 1995 Jun

    Keywords

    • CBED
    • Cross-sectional observation
    • Diamond paste
    • Dislocation
    • Local strain
    • Mass removal
    • Polishing
    • Silicon
    • TEM

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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