Abstract
The noble surface reconstructions of 2×2, 2×3, and 4×3 induced by In adsorption on a Si(001) surface have been studied by high-resolution photoelectron spectroscopy using synchrotron radiation. The surface core-level shifts of Si 2p were resolved, for the first time, for group-III adsorption on Si(001). It is shown that the Si dimers not bonded to In in the 2×3 phase are buckled and the Si dimers bonded to In are symmetric in both the 2×2 and 2×3 phases. In 4d spectra for all the three phases show a single component in agreement with the prevailing structure models of 2×3 and 2×2 phases but in contradiction to those of 4×3.
| Original language | English |
|---|---|
| Pages (from-to) | 4456-4459 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 54 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1996 Jan 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics