Surface core levels of In adsorption on Si(001)2×1

H. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

The noble surface reconstructions of 2×2, 2×3, and 4×3 induced by In adsorption on a Si(001) surface have been studied by high-resolution photoelectron spectroscopy using synchrotron radiation. The surface core-level shifts of Si 2p were resolved, for the first time, for group-III adsorption on Si(001). It is shown that the Si dimers not bonded to In in the 2×3 phase are buckled and the Si dimers bonded to In are symmetric in both the 2×2 and 2×3 phases. In 4d spectra for all the three phases show a single component in agreement with the prevailing structure models of 2×3 and 2×2 phases but in contradiction to those of 4×3.

Original languageEnglish
Pages (from-to)4456-4459
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number7
DOIs
Publication statusPublished - 1996 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Surface core levels of In adsorption on Si(001)2×1'. Together they form a unique fingerprint.

Cite this