Surface contamination effects on bonding performance in atomic diffusion bonding of wafers using amorphous Si thin films

T. Amino, M. Uomoto, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Room-temperature bonding using 20-nm thick amorphous Si films was studied as a function of waiting time tw in vacuum of 1.0 × 10-6 Pa between film deposition and bonding. Bonding strength decreased suddenly at tw greater than 3.6 × 103 s, which differed from behavior observed using Ti films.

Original languageEnglish
Title of host publication2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages40
Number of pages1
ISBN (Electronic)9781665405676
DOIs
Publication statusPublished - 2021 Oct 5
Event7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 - Virtual, Online, Japan
Duration: 2021 Oct 52021 Oct 11

Publication series

Name2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Conference

Conference7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Country/TerritoryJapan
CityVirtual, Online
Period21/10/521/10/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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