Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

Yukiko Yamada-Takamura, Z. T. Wang, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, P. L. Liu, A. V.G. Chizmeshya, J. Kouvetakis, I. S.T. Tsong

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    49 Citations (Scopus)

    Abstract

    Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.

    Original languageEnglish
    Article number266105
    JournalPhysical Review Letters
    Volume95
    Issue number26
    DOIs
    Publication statusPublished - 2005 Dec 31

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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