Surface analysis of Si/W multilayer using total reflection X-ray photoelectron spectroscopy

Jun Kawai, Kouichi Hayashi, Hiroyuki Amano, Hisataka Takenaka, Yoshinori Kitajima

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


X-ray photoelectron spectra of W/Si 100 bilayers on an Si wafer are measured using a soft X-ray synchrotron beam line at the Photon Factory. The grazing incident X-rays are used to excite photoelectrons. The Si 1s and W 3d5/2 photoelectron intensities are measured as a function of the glancing angle of the incident X-ray beam. The measured angle dependence of photoelectron peak intensity is reproduced by a simulation of surface layer structure.

Original languageEnglish
Pages (from-to)787-791
Number of pages5
JournalJournal of Electron Spectroscopy and Related Phenomena
Publication statusPublished - 1998 Mar
Externally publishedYes


  • Grazing incidence X-rays
  • Surface analysis
  • Total reflection X-rays
  • X-ray multilayer optics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry


Dive into the research topics of 'Surface analysis of Si/W multilayer using total reflection X-ray photoelectron spectroscopy'. Together they form a unique fingerprint.

Cite this