Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma

Toshikazu Kanetsuna, Takashi Matsuura, Junichi Murota

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Chlorine etching of heavily doped single-crystalline Si(100) using electron cyclotron resonance plasma has been investigated focusing on surface adsorption and reaction and impurity segregation. The elch rate of undoped and P-doped Si is nearly equal to the square of the concentration of Cl atoms adsorbed on the etched surface. On the other hand, in the case of B-doped Si, B segregation up to the monatomic layer concentration on the etched surface is observed, and the etching is suppressed by the segregated B atoms. Thus, the difference in the etching characteristics of doped Si and undoped Si is caused by the concentration difference of the adsorbed Cl atom and the impurity segregation on the etched surface.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume148
Issue number8
DOIs
Publication statusPublished - 2001 Aug 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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