TY - GEN
T1 - Surface activation process of lead-free solder bumps for low temperature bonding
AU - Wang, Ying Hui
AU - Nishida, Kenji
AU - Hutter, Matthias
AU - Howlader, Matiar R.
AU - Higurashi, Eiji
AU - Kimura, Takashi
AU - Suga, Tadatomo
PY - 2005
Y1 - 2005
N2 - Focused on the problems of the lead-free alloys bonding at high melting temperature, high density, low cost and low temperature lead-free flip chip bonding process was developed by the surface activated bonding (SAB) method. Sn-3.0Ag-0.5Cu (wt %) alloy, with better reliability and solderability than other alternatives for electronic packaging, were chose for the experiments to be bonded with typical electrodes, SnAg, Cu and Au film. The feasibility of Sn3.0Ag-0.5Cu SAB bonding at room temperature was confirmed. The bonding strength in vacuum and N2 was high. In air, it was found that the bonding strength was highly depended on exposure time. Combined with low temperature (150°C), SAB bonding process was developed in air by using 30μm pitch Au/Sn flip chip samples for the first time. Resistance and tensile test showed good electrical and mechanical properties of the bonded Au/Sn samples. Bonding interfaces were observed by scanning electron microscope (SEM) and electron probe micro-analyzer (EPMA).
AB - Focused on the problems of the lead-free alloys bonding at high melting temperature, high density, low cost and low temperature lead-free flip chip bonding process was developed by the surface activated bonding (SAB) method. Sn-3.0Ag-0.5Cu (wt %) alloy, with better reliability and solderability than other alternatives for electronic packaging, were chose for the experiments to be bonded with typical electrodes, SnAg, Cu and Au film. The feasibility of Sn3.0Ag-0.5Cu SAB bonding at room temperature was confirmed. The bonding strength in vacuum and N2 was high. In air, it was found that the bonding strength was highly depended on exposure time. Combined with low temperature (150°C), SAB bonding process was developed in air by using 30μm pitch Au/Sn flip chip samples for the first time. Resistance and tensile test showed good electrical and mechanical properties of the bonded Au/Sn samples. Bonding interfaces were observed by scanning electron microscope (SEM) and electron probe micro-analyzer (EPMA).
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U2 - 10.1109/ICEPT.2005.1564688
DO - 10.1109/ICEPT.2005.1564688
M3 - Conference contribution
AN - SCOPUS:33846309614
SN - 0780394496
SN - 9780780394490
T3 - 2005 6th International Conference on Electronics Packaging Technology
SP - 404
EP - 407
BT - 2005 6th International Conference on Electronics Packaging Technology
PB - IEEE Computer Society
T2 - 2005 6th International Conference on Electronics Packaging Technology
Y2 - 30 August 2005 through 2 September 2005
ER -