Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si

Ryo Takigawa; Eiji Higurashi; Tanemasa Asano

doi:10.23919/LTB-3D.2017.7947443

Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si

Ryo Takigawa, Eiji Higurashi, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Wafer-level bonding of LiNbO₃ (LN) and Si with thermally grown SiO₂ layer is demonstrated using surface-activated bonding method for the realization of LiNbO₃-on-Insulator (LNOI) on Si.

Original language	English
Title of host publication	Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	47
Number of pages	1
ISBN (Electronic)	9784904743034
DOIs	https://doi.org/10.23919/LTB-3D.2017.7947443
Publication status	Published - 2017 Jun 13
Externally published	Yes
Event	5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan Duration: 2017 May 16 → 2017 May 18

Publication series

Name	Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other	5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Country/Territory	Japan
City	Tokyo
Period	17/5/16 → 17/5/18

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.23919/LTB-3D.2017.7947443

Cite this

Takigawa, R., Higurashi, E., & Asano, T. (2017). Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 (pp. 47). [7947443] (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947443

Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si. / Takigawa, Ryo; Higurashi, Eiji; Asano, Tanemasa.

Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 47 7947443 (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takigawa, R, Higurashi, E & Asano, T 2017, Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si. in Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017., 7947443, Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Institute of Electrical and Electronics Engineers Inc., pp. 47, 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Tokyo, Japan, 17/5/16. https://doi.org/10.23919/LTB-3D.2017.7947443

Takigawa R, Higurashi E, Asano T. Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 47. 7947443. (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). doi: 10.23919/LTB-3D.2017.7947443

Takigawa, Ryo ; Higurashi, Eiji ; Asano, Tanemasa. / Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si. Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 47 (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017).

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abstract = "Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.",

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