Surface activated flip-chip bonding of laser chips

Eiji Higurashi; Tadatomo Suga; Masao Nakagawa; Renshi Sawada

doi:10.1115/ipack2005-73436

Surface activated flip-chip bonding of laser chips

Eiji Higurashi, Tadatomo Suga, Masao Nakagawa, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

Original language	English
Title of host publication	Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems
Subtitle of host publication	Advances in Electronic Packaging 2005
Publisher	American Society of Mechanical Engineers
Pages	793-796
Number of pages	4
ISBN (Print)	0791842002, 9780791842003
DOIs	https://doi.org/10.1115/ipack2005-73436
Publication status	Published - 2005
Externally published	Yes
Event	ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 - San Francisco, CA, United States Duration: 2005 Jul 17 → 2005 Jul 22

Publication series

Name	Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
Volume	PART A

Other

Other	ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
Country/Territory	United States
City	San Francisco, CA
Period	05/7/17 → 05/7/22

Keywords

Flip-chip bonding
Hybrid Integration
Surface Activated bonding

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1115/ipack2005-73436

Cite this

Higurashi, E., Suga, T., Nakagawa, M., & Sawada, R. (2005). Surface activated flip-chip bonding of laser chips. In Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 (pp. 793-796). (Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005; Vol. PART A). American Society of Mechanical Engineers. https://doi.org/10.1115/ipack2005-73436

Surface activated flip-chip bonding of laser chips. / Higurashi, Eiji; Suga, Tadatomo; Nakagawa, Masao et al.

Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. American Society of Mechanical Engineers, 2005. p. 793-796 (Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005; Vol. PART A).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Higurashi, E, Suga, T, Nakagawa, M & Sawada, R 2005, Surface activated flip-chip bonding of laser chips. in Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005, vol. PART A, American Society of Mechanical Engineers, pp. 793-796, ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005, San Francisco, CA, United States, 05/7/17. https://doi.org/10.1115/ipack2005-73436

Higurashi E, Suga T, Nakagawa M, Sawada R. Surface activated flip-chip bonding of laser chips. In Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. American Society of Mechanical Engineers. 2005. p. 793-796. (Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005). doi: 10.1115/ipack2005-73436

Higurashi, Eiji ; Suga, Tadatomo ; Nakagawa, Masao et al. / Surface activated flip-chip bonding of laser chips. Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. American Society of Mechanical Engineers, 2005. pp. 793-796 (Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005).

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title = "Surface activated flip-chip bonding of laser chips",

abstract = "This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.",

keywords = "Flip-chip bonding, Hybrid Integration, Surface Activated bonding",

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N2 - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

AB - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

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Surface activated flip-chip bonding of laser chips

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

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