TY - GEN
T1 - Suprious-Free, Near-Zero-TCF Hetero Acoustic Layer (HAL)SAW Resonators Using LiTaO 3 Thin Plate on Quartz
AU - Kadota, Michio
AU - Ishii Yunoki, Yoshimi
AU - Shimatsu, Takehito
AU - Uomoto, Miyuki
AU - Tanaka, Shuji
PY - 2018/12/17
Y1 - 2018/12/17
N2 - This paper reports the spurious characteristics of Hetero Acoustic Layer (HAL)SAW resonators at high frequency. Spurious-free characteristic is important for carrier aggregation etc. in addition to high impedance ratio, high Q and small temperature coefficient of frequency (TCF). Four types of LT / quartz HAL SAW resonators were fabricated and evaluated up to 14 GHz. All devices show no significant spurious responses. By contrast, a reference HAL SAW resonator with a structure of LT / SiO 2 / Si shows strong spurious responses near the main response. The spurious responses get closer to the main response using a thinner SiO 2 layer, which is inconvenient for TCF compensation. In addition, the TCF of the HAL SAW resonators are discussed in detail.
AB - This paper reports the spurious characteristics of Hetero Acoustic Layer (HAL)SAW resonators at high frequency. Spurious-free characteristic is important for carrier aggregation etc. in addition to high impedance ratio, high Q and small temperature coefficient of frequency (TCF). Four types of LT / quartz HAL SAW resonators were fabricated and evaluated up to 14 GHz. All devices show no significant spurious responses. By contrast, a reference HAL SAW resonator with a structure of LT / SiO 2 / Si shows strong spurious responses near the main response. The spurious responses get closer to the main response using a thinner SiO 2 layer, which is inconvenient for TCF compensation. In addition, the TCF of the HAL SAW resonators are discussed in detail.
KW - LiTaO3
KW - SAW resonator
KW - TCF
KW - hetero acoustic layer
KW - impedance ratio
KW - quartz
KW - spurious response
UR - http://www.scopus.com/inward/record.url?scp=85060657668&partnerID=8YFLogxK
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U2 - 10.1109/ULTSYM.2018.8580111
DO - 10.1109/ULTSYM.2018.8580111
M3 - Conference contribution
AN - SCOPUS:85060657668
T3 - IEEE International Ultrasonics Symposium, IUS
BT - 2018 IEEE International Ultrasonics Symposium, IUS 2018
PB - IEEE Computer Society
T2 - 2018 IEEE International Ultrasonics Symposium, IUS 2018
Y2 - 22 October 2018 through 25 October 2018
ER -