Suppression of topography-dependent charging damage to MOS devices using pulse-time-modulated plasma

K. Noguchi, H. Ohtake, S. Samukawa, T. Horiuchi

Research output: Contribution to conferencePaperpeer-review

7 Citations (Scopus)

Abstract

Topography-dependent charging damage to MOS devices occurring during metal etching can be suppressed by using pulse-time-modulated plasma. The reliability of MOS devices fabricated using pulse-time-modulated plasma is investigated from the charge-to-breakdown and the threshold voltage as a function of the pulse interval and the antenna topography. We show that, with an increase in the interval of the μ-wave source power, the charging damage to the MOS devices is significantly reduced: the charging current is reduced to 1/5 at a pulse interval of 100 μsec.

Original languageEnglish
Pages176-179
Number of pages4
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA
Duration: 1998 Jun 41998 Jun 5

Other

OtherProceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID
CityHonolulu, HI, USA
Period98/6/498/6/5

ASJC Scopus subject areas

  • Engineering(all)

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