Abstract
Topography-dependent charging damage to MOS devices occurring during metal etching can be suppressed by using pulse-time-modulated plasma. The reliability of MOS devices fabricated using pulse-time-modulated plasma is investigated from the charge-to-breakdown and the threshold voltage as a function of the pulse interval and the antenna topography. We show that, with an increase in the interval of the μ-wave source power, the charging damage to the MOS devices is significantly reduced: the charging current is reduced to 1/5 at a pulse interval of 100 μsec.
| Original language | English |
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| Pages | 176-179 |
| Number of pages | 4 |
| Publication status | Published - 1998 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA Duration: 1998 Jun 4 → 1998 Jun 5 |
Other
| Other | Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID |
|---|---|
| City | Honolulu, HI, USA |
| Period | 98/6/4 → 98/6/5 |
ASJC Scopus subject areas
- Engineering(all)