Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

T. Matsukawa, Y. X. Liu, W. Mizubayashi, J. Tsukada, H. Yamauchi, K. Endo, Y. Ishikawa, S. Ouchi, H. Ota, S. Migita, Y. Morita, M. Masahara

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12 Citations (Scopus)

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Physics & Astronomy