Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

T. Matsukawa, Y. X. Liu, W. Mizubayashi, J. Tsukada, H. Yamauchi, K. Endo, Y. Ishikawa, S. Ouchi, H. Ota, S. Migita, Y. Morita, M. Masahara

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

An amorphous TaSiN metal gate (MG) is introduced into double-gate fin field-effect transistors (FinFETs) to suppress work function variation (WFV) of the MG, which is a dominant source of threshold voltage (Vt) variability for MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces Vt variation dramatically and thus records the smallest AVt value of 1.34 mV μm reported so far for the MG-FinFETs. By decomposing the variation source due to interface trap density, the WFV suppression using the amorphous MG is confirmed to be effective to achieve the well-suppressed variability of the MG-FinFETs.

Original languageEnglish
Article number162104
JournalApplied Physics Letters
Volume102
Issue number16
DOIs
Publication statusPublished - 2013 Apr 22
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function'. Together they form a unique fingerprint.

Cite this