Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

Mei Yin Chan, Katsuyoshi Komatsu, Song Lin Li, Yong Xu, Peter Darmawan, Hiromi Kuramochi, Shu Nakaharai, Alex Aparecido-Ferreira, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)

Abstract

We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.

Original languageEnglish
Pages (from-to)9572-9576
Number of pages5
JournalNanoscale
Volume5
Issue number20
DOIs
Publication statusPublished - 2013 Oct 21
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)

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