Suppression of the unconventional metallic behavior by gate voltage in MWNT device

T. Kanbara, Y. Iwasa, K. Tsukagoshi, Y. Aoyagi

Research output: Contribution to journalArticlepeer-review


We observed an ambipolar behavior in multiwalled carbon nanotubes (MWNT) in a back-gate configuration, which allowed us to perform systematic inspection of the low-temperature transport properties against gate voltage. Power-law behaviors in temperature and bias-dependent conductance, disappeared when a high gate voltage was applied, and conductance became temperature- and bias independent. This indicates a gate-induced transformation from the unconventional to the normal metallic states in MWNT.

Original languageEnglish
Pages (from-to)698-701
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number3-4
Publication statusPublished - 2005 Nov
Externally publishedYes


  • Electronis structure of nanoscale materials
  • Nanotube
  • Nanotube devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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