Suppression of structural imperfection in strained Si thin film by utilizing SiGe bulk substrate

Noritaka Usami, Yoshitaro Nose, Kozo Fujiwara, Kazuo Nakajima

Research output: Contribution to journalConference articlepeer-review

Abstract

We demonstrate suppression of structural imperfection in strained Si by utilizing homemade SiGe bulk crystal as a substrate. X-ray reciprocal space mapping clarified that the growth of a Si thin film on a SiGe bulk substrate leads to reduction in the orientation fluctuation compared with that on a SiGe virtual substrate. Furthermore, analysis of Raman spectra revealed dramatic decrease of the strain fluctuation in the strained Si film on the SiGe bulk substrate. These results suggest that the SiGe bulk crystal can be utilized as a substrate for various strain-controlled heterostructures for fundamental studies as well as improvement of device performance. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)299-302
Number of pages4
JournalECS Transactions
Volume3
Issue number7
DOIs
Publication statusPublished - 2006 Dec 1
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

ASJC Scopus subject areas

  • Engineering(all)

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