Suppression of structural imperfection in strained Si thin film by utilizing SiGe bulk substrate

Noritaka Usami, Yoshitaro Nose, Kozo Fujiwara, Kazuo Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate suppression of structural imperfection in strained Si by utilizing homemade SiGe bulk crystal as a substrate. X-ray reciprocal space mapping clarified that the growth of a Si thin film on a SiGe bulk substrate leads to reduction in the orientation fluctuation compared with that on a SiGe virtual substrate. Furthermore, analysis of Raman spectra revealed dramatic decrease of the strain fluctuation in the strained Si film on the SiGe bulk substrate. These results suggest that the SiGe bulk crystal can be utilized as a substrate for various strain-controlled heterostructures for fundamental studies as well as improvement of device performance. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationSiGe and Ge
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages299-302
Number of pages4
Edition7
ISBN (Electronic)1566775078
DOIs
Publication statusPublished - 2006
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Publication series

NameECS Transactions
Number7
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period06/10/2906/11/3

ASJC Scopus subject areas

  • Engineering(all)

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