Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

N. Usami, Y. Nose, K. Fujiwara, K. Nakajima

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We attempted to utilize homemade SiGe bulk crystal as a substrate for epitaxy of strain-controlled heterostructures. X-ray reciprocal space mapping clarified that the growth of a Si thin film on a SiGe bulk substrate leads to reduction in the orientation fluctuation compared with that on a SiGe virtual substrate. Furthermore, analysis of Raman spectra revealed a dramatic decrease of the strain fluctuation in the strained Si film on the SiGe bulk substrate. These results suggest that the SiGe bulk crystal can be utilized as a substrate for various strain-controlled heterostructures for fundamental studies as well as improvement of device performance.

Original languageEnglish
Article number221912
JournalApplied Physics Letters
Volume88
Issue number22
DOIs
Publication statusPublished - 2006 May 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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