Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia

Masayuki Tanaka, Shigehiko Saida, Ichiro Mizushima, Fumihiko Inoue, Manabu Kojima, Tetsu Tanaka, Toshiro Nakanishi, Kyoichi Suguro, Yoshitaka Tsunashima

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Applications of SiH-free silicon nitride (SiN) films, formed by tetrachlorosilane (TCS) and ammonia, have been proved to effectively suppress the SiN-induced boron penetration. The SiN-induced boron penetration has been investigated in detail by using boron-doped polysilicon gated capacitors with several kinds of thick SiN films. It was clarified for the first time that the SiN-induced boron penetration becomes worse with SiH content in SiN films and deposition technique of SiH-free TCS-SiN films is essential for realization of the high-performance PMOSFETs.

Original languageEnglish
Pages (from-to)1526-1531
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume49
Issue number9
DOIs
Publication statusPublished - 2002 Sep 1
Externally publishedYes

Keywords

  • Boron penetration
  • Hydrogen
  • Silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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