Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell

Takuya Imamoto, Tetsuo Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Excellent thermal characteristics of the bulk vertical-channel bipor junction transistor (BJT) type 1T-DRAM compared to the SOI planar type with 20nm generation. The bulk vertical type can operate with the low increase of lattice temperature (ΔTLmax) of 26K and high enough read current margin of 1.8μA/cell, while the SOI planar type shows large ΔTLmax value of 58K.

Original languageEnglish
Title of host publication2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
PublisherIEEE Computer Society
ISBN (Print)9781479913602
DOIs
Publication statusPublished - 2013 Jan 1
Event2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States
Duration: 2013 Oct 72013 Oct 10

Publication series

Name2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Other

Other2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Country/TerritoryUnited States
CityMonterey, CA
Period13/10/713/10/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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