Suppression of Parallel Conduction at the Interface in β-Ga2O3 Homoepitaxial Layer Using Semi-Insulating Intermediate Layer

T. Saito, R. Wakabayashi, J. S. Lee, K. Kamei, K. Yoshimatsu, M. Kado, A. Ohtomo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

β-Ga2O3 is one of the wide-gap semiconductors investigated actively in recent years, and evaluation of its electrical properties is needed for various device applications. However, the presence of Si impurity on a β-Ga2O3 substrate has been a tantalized issue, which gives rise to parasitic conduction parallel to the interface with an overgrown epilayer. Therefore, this interface conduction must be eliminated in order to measure the electrical characteristics inherent in the epilayers. Using pulsed-laser deposition, we revealed that a semi-insulatiug β-Ga2O3:Fe intermediate layer, as thin as 7 nm, was effective to passivate the Si impurity and the interface conduction became negligibly low. Moreover, we achieved room-temperature Hall mobility as high as 28 cm2V-1s-1 for the β-Ga2O3:Si film grown on the intermediate layer. These results demonstrate a facile route to access fundamental electrical properties of homoepitaxial β-Ga2O3 films.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
DOIs
Publication statusPublished - 2019 May
Externally publishedYes
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: 2019 May 192019 May 23

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
CountryJapan
CityNara
Period19/5/1919/5/23

Keywords

  • GaO
  • Hall mobility
  • pulsed-laser deposition
  • thin film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics

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    Saito, T., Wakabayashi, R., Lee, J. S., Kamei, K., Yoshimatsu, K., Kado, M., & Ohtomo, A. (2019). Suppression of Parallel Conduction at the Interface in β-Ga2O3 Homoepitaxial Layer Using Semi-Insulating Intermediate Layer. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings [8819272] (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2019.8819272