Effect of Ga substitution in the (Lu, Pr) 3Al 5O 12(Pr : LuAG) scintillator was examined at the crystals grown by the micropulling down (μ-PD) method. Host luminescence due to an exciten localized around the Lu-Al antisite defect was suppressed by Ga admixture. Concentration depenendence was investigated and suppression was observed even at the lowest Ga concentration of 5 mol%. Faster decay time as well as less intense slower components were obtained upon increasing the amount of Ga. In the thermostimulated luminescence measurement, the glow curve peaks are gradually shifted to lower temperatures with the gallium admixture, and noticeable intensity decrease was observed only for the (Lu, Pr) 3(Ga 0.2Al 0.8) 5O 12. The undesired quenching effect of Ga on the Pr 3+ luminescence seems to be reasonably low up to (Lu, Pr) 3(Ga 0.2Al 0.8) 5O 12 sample. It is estimated to introduce nonradiative losses of less than 10% with respect to Ga-free Pr:LuAG. Bulk crystals were also grown by the Czochralski (Cz) method and these effects were confirmed.
- Gamma-ray detectors
- Nuclear imaging
- Praseodymium compounds
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering