Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2007 Jun 15|
- Carbon nanotube
- Thin-film transistor
ASJC Scopus subject areas
- Physics and Astronomy(all)