Abstract
We report on dc drift characteristics with short relaxation times (typically 20–30 s) of LiNb03-based electrooptic switches for use at the wavelength of 1.3 μm. We evaluated the switch elements without oxide buffer layers to focus on the substrate. Sputter-etching of more than 20 nm of the substrate surface after waveguide fabrication results in a remarkable suppression of the drift: drift-induced crosstalk of below -25 dB has been achieved. The sputtering process also reduces the range of scatter of voltage drift among four switches fabricated on a single substrate. With data on the capacitance and resistance between a pair of electrodes, the above effects are attributed to the removal of the surface layer by sputtering.
Original language | English |
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Pages (from-to) | 909-915 |
Number of pages | 7 |
Journal | Journal of Lightwave Technology |
Volume | 6 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1988 Jun |
Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics