Suppression of Crosstalk Drift in Ti: LiNbO3 Waveguide Switches

Takumi Fujiwara, Shinya Sato, Hiroshi Mori, Yoshimasa Fujii

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

We report on dc drift characteristics with short relaxation times (typically 20–30 s) of LiNb03-based electrooptic switches for use at the wavelength of 1.3 μm. We evaluated the switch elements without oxide buffer layers to focus on the substrate. Sputter-etching of more than 20 nm of the substrate surface after waveguide fabrication results in a remarkable suppression of the drift: drift-induced crosstalk of below -25 dB has been achieved. The sputtering process also reduces the range of scatter of voltage drift among four switches fabricated on a single substrate. With data on the capacitance and resistance between a pair of electrodes, the above effects are attributed to the removal of the surface layer by sputtering.

Original languageEnglish
Pages (from-to)909-915
Number of pages7
JournalJournal of Lightwave Technology
Volume6
Issue number6
DOIs
Publication statusPublished - 1988 Jun

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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