Suppression of Charges in Al2O3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation

Kenzo Manabe, Kazuhiko Endo, Satoshi Kamiyama, Toshiyuki Iwamoto, Takashi Ogura, Nobuyuki Ikarashi, Toyoji Yamamoto, Toru Tatsumi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We studied nitrogen incorporation in Al2O3 gate dielectrics by nitrogen plasma and examined the dependence of the electrical properties on the nitrogen incorporation. We found that the nitrogen concentration and profile in Al2O3 films thinner than 3 nm can be controlled by the substrate temperature and the plasma conditions. The electrical characterization showed that the plasma nitridation suppresses charges in Al2O3 films and prevents dopant penetration through the gate dielectric without increasing the leakage current or the interfacial trap density. We also demonstrated the improved performance of a metal-oxide-semiconductor field effect transistor by using a plasma nitrided Al2O3 gate dielectric. These results indicate that plasma nitridation is a promising method for improving the electrical properties of Al2O3 gate dielectrics.

Original languageEnglish
Pages (from-to)30-36
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE87-C
Issue number1
Publication statusPublished - 2004 Jan
Externally publishedYes

Keywords

  • Aluminum oxide
  • Fixed charge
  • High-κ gate dielectric
  • MOSFET performance
  • Plasma nitridation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Manabe, K., Endo, K., Kamiyama, S., Iwamoto, T., Ogura, T., Ikarashi, N., Yamamoto, T., & Tatsumi, T. (2004). Suppression of Charges in Al2O3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation. IEICE Transactions on Electronics, E87-C(1), 30-36.