TY - GEN
T1 - Suppression of bias- and temperature-dependent conductance by gate-voltage in multi-walled carbon nanotube
AU - Kanbara, T.
AU - Tsukagoshi, K.
AU - Aoyagi, Y.
AU - Iwasa, Y.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/9/27
Y1 - 2005/9/27
N2 - We observed an ambipolar behavior in multiwalled carbon nanotubes (MWNT) in a back-gate configuration. The four-terminal measurement indicates that the ambipolar behavior is originated from an intrinsic conductivity of MWNT. power-law behaviors, in temperature- and bias-dependent conductance, disappeared when a high gate voltage is applied, and conductance become temperature- and bias-independent. This result indicates an occurrence of gate-induced transformation from the unconventional to the normal metallic states in MWNT.
AB - We observed an ambipolar behavior in multiwalled carbon nanotubes (MWNT) in a back-gate configuration. The four-terminal measurement indicates that the ambipolar behavior is originated from an intrinsic conductivity of MWNT. power-law behaviors, in temperature- and bias-dependent conductance, disappeared when a high gate voltage is applied, and conductance become temperature- and bias-independent. This result indicates an occurrence of gate-induced transformation from the unconventional to the normal metallic states in MWNT.
UR - http://www.scopus.com/inward/record.url?scp=33747036281&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33747036281&partnerID=8YFLogxK
U2 - 10.1063/1.2103917
DO - 10.1063/1.2103917
M3 - Conference contribution
AN - SCOPUS:33747036281
SN - 0735402752
SN - 9780735402751
T3 - AIP Conference Proceedings
SP - 499
EP - 503
BT - ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES
T2 - ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials
Y2 - 12 March 2005 through 19 March 2005
ER -