Suppression of bias- and temperature-dependent conductance by gate-voltage in multi-walled carbon nanotube

T. Kanbara, K. Tsukagoshi, Y. Aoyagi, Y. Iwasa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We observed an ambipolar behavior in multiwalled carbon nanotubes (MWNT) in a back-gate configuration. The four-terminal measurement indicates that the ambipolar behavior is originated from an intrinsic conductivity of MWNT. power-law behaviors, in temperature- and bias-dependent conductance, disappeared when a high gate voltage is applied, and conductance become temperature- and bias-independent. This result indicates an occurrence of gate-induced transformation from the unconventional to the normal metallic states in MWNT.

Original languageEnglish
Title of host publicationELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES
Subtitle of host publicationXIX International Winterschool/Euroconference on Electronic Properties of Novel Materials
Pages499-503
Number of pages5
DOIs
Publication statusPublished - 2005 Sep 27
EventELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials - Kirchberg, Tirol, Austria
Duration: 2005 Mar 122005 Mar 19

Publication series

NameAIP Conference Proceedings
Volume786
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials
CountryAustria
CityKirchberg, Tirol
Period05/3/1205/3/19

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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