Suppression of Auger deexcitation and temperature quenching of the Er-related 1.54 μm emission with an ultrathin oxide interlayer in an Er/SiO2/Si structure

Tadamasa Kimura, Hideo Isshiki, Sawa Ide, Takanori Shimizu, Takeshi Ishida, Riichiro Saito

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

An Er-doped porous silicon (PSi) was used to obtain a strong enhancement of the Er3+ -related 1.54 μm emission. The measurement of the energy transfer and the Auger deexcitation between carriers in Si crystallites of preoxidized PSi and Er3+ were performed. It was found that a thin SiO2 interlayer was also effective at suppressing the phonon-assisted energy backtransfer at high temperatures.

Original languageEnglish
Pages (from-to)2595-2601
Number of pages7
JournalJournal of Applied Physics
Volume93
Issue number5
DOIs
Publication statusPublished - 2003 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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