Suppression of atomic exchange between Ge and Si during germane adsorption on Si(001) using atomically flat surface

Yuzuru Narita, Takeshi Murata, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Impact of surface roughness on the atomic exchange between Si and Ge upon room-temperature adsorption of germane (GeH4) at Si(001)-2 × 1 surface has been investigated by using temperature-programmed desorption (TPD) and multiple-internal-reflection Fourier-transform infrared spectroscopy (MIR-FTIR). Two different pretreatments of Si surfaces have been tested. On the normal surface, prepared simply by a 1200 °C flash anneal, considerable atomic exchange between Si and Ge was observed. On the epi-surface, prepared by a flash anneal followed by a Si-homoepitaxy, the atomic exchange was greatly suppressed. We relate this suppression with a possible reduction of the dimer vacancies that have been generated on the surface during the flash anneal. Suppression of surface roughness in atomic order is key to suppression of atomic exchange between Si and Ge during Ge/Si interface formation.

Original languageEnglish
Pages (from-to)166-168
Number of pages3
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

Keywords

  • Ge/Si atomic exchange
  • Germanium
  • Infrared spectroscopy
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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