Suppression of 1/f noise in accumulation mode FD-SOI MOSFETs on Si(lOO) and (110) surfaces

W. Cheng; C. Tye; P. Gaubert; A. Teramoto; S. Sugawa; T. Ohmi

doi:10.1063/1.3140467

Suppression of 1/f noise in accumulation mode FD-SOI MOSFETs on Si(lOO) and (110) surfaces

W. Cheng, C. Tye, P. Gaubert, A. Teramoto, S. Sugawa, T. Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

In this paper, a new approach to reduce the 1/f noise levels in the MOSFETs on varied silicon orientations, such as Si(lOO) and (110) surfaces, has been carried out. We focus on the Accumulation-mode (AM) FD-SOl device structure and demonstrate that the 1/f noise levels in this AM FD-SOl MOSFETs are obviously reduced on both the Si(lOO) and (110) surfaces.

Original language	English
Title of host publication	Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009
Pages	337-340
Number of pages	4
DOIs	https://doi.org/10.1063/1.3140467
Publication status	Published - 2009
Event	20th International Conference on Noise and Fluctuations, ICNF 2009 - Pisa, Italy Duration: 2009 Jun 14 → 2009 Jun 19

Publication series

Name	AIP Conference Proceedings
Volume	1129
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	20th International Conference on Noise and Fluctuations, ICNF 2009
Country/Territory	Italy
City	Pisa
Period	09/6/14 → 09/6/19

Keywords

1/f noise
Accumulation-mode
SOI
Silicon orientation

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3140467

Cite this

Suppression of 1/f noise in accumulation mode FD-SOI MOSFETs on Si(lOO) and (110) surfaces. / Cheng, W.; Tye, C.; Gaubert, P. et al.

Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009. 2009. p. 337-340 (AIP Conference Proceedings; Vol. 1129).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cheng, W, Tye, C, Gaubert, P, Teramoto, A, Sugawa, S & Ohmi, T 2009, Suppression of 1/f noise in accumulation mode FD-SOI MOSFETs on Si(lOO) and (110) surfaces. in Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009. AIP Conference Proceedings, vol. 1129, pp. 337-340, 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 09/6/14. https://doi.org/10.1063/1.3140467

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abstract = "In this paper, a new approach to reduce the 1/f noise levels in the MOSFETs on varied silicon orientations, such as Si(lOO) and (110) surfaces, has been carried out. We focus on the Accumulation-mode (AM) FD-SOl device structure and demonstrate that the 1/f noise levels in this AM FD-SOl MOSFETs are obviously reduced on both the Si(lOO) and (110) surfaces.",

keywords = "1/f noise, Accumulation-mode, SOI, Silicon orientation",

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AU - Sugawa, S.

AU - Ohmi, T.

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KW - Silicon orientation

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Suppression of 1/f noise in accumulation mode FD-SOI MOSFETs on Si(lOO) and (110) surfaces

Abstract

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Keywords

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