Suppressing Vt and Gm variability of FinFETs using amorphous metal gates for 14 nm and beyond

Takashi Matsukawa; Yongxun Liu; Wataru Mizubayashi; Junichi Tsukada; Hiromi Yamauchi; Kazuhiko Endo; Yuki Ishikawa; Shin Ichi O'Uchi; Hiroyuki Ota; Shinji Migita; Yukinori Morita; Meishoku Masahara

doi:10.1109/IEDM.2012.6479002

Suppressing V_t and G_m variability of FinFETs using amorphous metal gates for 14 nm and beyond

Takashi Matsukawa, Yongxun Liu, Wataru Mizubayashi, Junichi Tsukada, Hiromi Yamauchi, Kazuhiko Endo, Yuki Ishikawa, Shin Ichi O'Uchi, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

Amorphous TaSiN metal gates (MGs) are successfully introduced in FinFETs to suppress work function variation (WFV) of the MG, which is a dominant contributor to threshold voltage (V_t) variability of the undoped channel MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces V_t variation drastically and records the smallest A _Vt value of 1.34 mVμm reported so far for MG FinFETs. Interface traps also become a dominant A_Vt origin in the case of well-suppressed WFV using the amorphous M G. The WFV suppression is also effective to reduce trans-conductance (G_m) variability which will be a dominant source of on-current (I_on) variability in 14 nm technology and beyond.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
DOIs	https://doi.org/10.1109/IEDM.2012.6479002
Publication status	Published - 2012 Dec 1
Externally published	Yes
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 2012 Dec 10 → 2012 Dec 13

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	12/12/10 → 12/12/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2012.6479002

Cite this

Matsukawa, T., Liu, Y., Mizubayashi, W., Tsukada, J., Yamauchi, H., Endo, K., Ishikawa, Y., O'Uchi, S. I., Ota, H., Migita, S., Morita, Y., & Masahara, M. (2012). Suppressing V_t and G_m variability of FinFETs using amorphous metal gates for 14 nm and beyond. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 [6479002] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479002

Suppressing V_t and G_m variability of FinFETs using amorphous metal gates for 14 nm and beyond. / Matsukawa, Takashi; Liu, Yongxun; Mizubayashi, Wataru et al.

2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. 6479002 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsukawa, T, Liu, Y, Mizubayashi, W, Tsukada, J, Yamauchi, H, Endo, K, Ishikawa, Y, O'Uchi, SI, Ota, H, Migita, S, Morita, Y & Masahara, M 2012, Suppressing V_t and G_m variability of FinFETs using amorphous metal gates for 14 nm and beyond. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479002, Technical Digest - International Electron Devices Meeting, IEDM, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/12/10. https://doi.org/10.1109/IEDM.2012.6479002

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abstract = "Amorphous TaSiN metal gates (MGs) are successfully introduced in FinFETs to suppress work function variation (WFV) of the MG, which is a dominant contributor to threshold voltage (Vt) variability of the undoped channel MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces Vt variation drastically and records the smallest A Vt value of 1.34 mVμm reported so far for MG FinFETs. Interface traps also become a dominant AVt origin in the case of well-suppressed WFV using the amorphous M G. The WFV suppression is also effective to reduce trans-conductance (Gm) variability which will be a dominant source of on-current (Ion) variability in 14 nm technology and beyond.",

author = "Takashi Matsukawa and Yongxun Liu and Wataru Mizubayashi and Junichi Tsukada and Hiromi Yamauchi and Kazuhiko Endo and Yuki Ishikawa and O'Uchi, {Shin Ichi} and Hiroyuki Ota and Shinji Migita and Yukinori Morita and Meishoku Masahara",

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AU - Matsukawa, Takashi

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AU - Tsukada, Junichi

AU - Yamauchi, Hiromi

AU - Endo, Kazuhiko

AU - Ishikawa, Yuki

AU - O'Uchi, Shin Ichi

AU - Ota, Hiroyuki

AU - Migita, Shinji

AU - Morita, Yukinori

AU - Masahara, Meishoku

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AB - Amorphous TaSiN metal gates (MGs) are successfully introduced in FinFETs to suppress work function variation (WFV) of the MG, which is a dominant contributor to threshold voltage (Vt) variability of the undoped channel MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces Vt variation drastically and records the smallest A Vt value of 1.34 mVμm reported so far for MG FinFETs. Interface traps also become a dominant AVt origin in the case of well-suppressed WFV using the amorphous M G. The WFV suppression is also effective to reduce trans-conductance (Gm) variability which will be a dominant source of on-current (Ion) variability in 14 nm technology and beyond.

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