Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates

T. Matsukawa, Y. X. Liu, K. Endo, W. Mizubayashi, J. Tsukada, Y. Ishikawa, H. Yamauchi, S. O'Uchi, H. Ota, S. Migita, Y. Morita, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Influence of work function (WF) uniformity of metal gates (MGs) on current-onset voltage (COV) fluctuation is investigated in detail for MG FinFETs. In addition to significantly suppressed variability of threshold voltage (Vt) itself, FinFETs with an amorphous TaSiN MG exhibit smaller COV fluctuation than that with a polycrystalline TiN MG. It is revealed that the COV variability is caused by the potential non-uniformity in the channel due to the WF variation of the poly grains and is effectively improved using the amorphous MG.

Original languageEnglish
Title of host publication2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs
Publication statusPublished - 2013 Aug 12
Externally publishedYes
Event2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan, Province of China
Duration: 2013 Apr 222013 Apr 24

Publication series

Name2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
CountryTaiwan, Province of China
CityHsinchu
Period13/4/2213/4/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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