The effect of the dc current injection on trapped domain walls in magnetic nanostructures designed for high precision anisotropy magnetoresistance measurements was investigated. The magnetoresistance was measured at 4.1 K by a low-noise four-terminal dc measurement system in the range of the external magnetic field H from -100 to 100 mT along the wire. The switching field distribution at each injecting current was found to be less than 5%. The results show that the depinning field of the domain wall decreases when the electron current is applied along the direction of the domain wall propagation.
ASJC Scopus subject areas
- Physics and Astronomy(all)