Abstract
Ferromagnetic semiconductor (Ga,Mn)As-based superlattice and multilayer structures, (Ga,Mn)As/(Al,Ga)As and (Ga,Mn)As/(In,Ga)As, were prepared by molecular beam epitaxy. X-ray diffraction measurements showed that the thickness and alloy composition in the superlattices were well controlled. Magnetotransport measurements revealed the existence of ferromagnetic order at low temperatures. Resonant tunneling diodes with (Ga,Mn)As showed features that are well explained by a simple physical picture.
| Original language | English |
|---|---|
| Pages (from-to) | 809-813 |
| Number of pages | 5 |
| Journal | Physica B: Condensed Matter |
| Volume | 249-251 |
| DOIs | |
| Publication status | Published - 1998 Jun 17 |
Keywords
- (Ga,Mn)As
- Ferromagnetic semiconductor
- Ferromagnetism
- Resonant tunneling
- Superlattices
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Shen, A., Ohno, H., Matsukura, F., Liu, H. C., Akiba, N., Sugawara, Y., Kuroiwa, T., & Ohno, Y. (1998). Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As. Physica B: Condensed Matter, 249-251, 809-813. https://doi.org/10.1016/S0921-4526(98)00319-6