Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As

A. Shen, H. Ohno, F. Matsukura, H. C. Liu, N. Akiba, Y. Sugawara, T. Kuroiwa, Y. Ohno

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Ferromagnetic semiconductor (Ga,Mn)As-based superlattice and multilayer structures, (Ga,Mn)As/(Al,Ga)As and (Ga,Mn)As/(In,Ga)As, were prepared by molecular beam epitaxy. X-ray diffraction measurements showed that the thickness and alloy composition in the superlattices were well controlled. Magnetotransport measurements revealed the existence of ferromagnetic order at low temperatures. Resonant tunneling diodes with (Ga,Mn)As showed features that are well explained by a simple physical picture.

Original languageEnglish
Pages (from-to)809-813
Number of pages5
JournalPhysica B: Condensed Matter
Publication statusPublished - 1998 Jun 17


  • (Ga,Mn)As
  • Ferromagnetic semiconductor
  • Ferromagnetism
  • Resonant tunneling
  • Superlattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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