TY - JOUR
T1 - Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As
AU - Shen, A.
AU - Ohno, H.
AU - Matsukura, F.
AU - Liu, H. C.
AU - Akiba, N.
AU - Sugawara, Y.
AU - Kuroiwa, T.
AU - Ohno, Y.
N1 - Funding Information:
This work was partially supported by a Grant-in-Aid for Scientific Research on Priority Area `Spin Controlled Semiconductor Nanostructures' (No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan and by `Research for the Future' Program (No. JSPS-RFTF97P00202) from the Japan Society for the Promotion of Science (JSPS). HCL thanks JSPS for the fellowship.
PY - 1998/6/17
Y1 - 1998/6/17
N2 - Ferromagnetic semiconductor (Ga,Mn)As-based superlattice and multilayer structures, (Ga,Mn)As/(Al,Ga)As and (Ga,Mn)As/(In,Ga)As, were prepared by molecular beam epitaxy. X-ray diffraction measurements showed that the thickness and alloy composition in the superlattices were well controlled. Magnetotransport measurements revealed the existence of ferromagnetic order at low temperatures. Resonant tunneling diodes with (Ga,Mn)As showed features that are well explained by a simple physical picture.
AB - Ferromagnetic semiconductor (Ga,Mn)As-based superlattice and multilayer structures, (Ga,Mn)As/(Al,Ga)As and (Ga,Mn)As/(In,Ga)As, were prepared by molecular beam epitaxy. X-ray diffraction measurements showed that the thickness and alloy composition in the superlattices were well controlled. Magnetotransport measurements revealed the existence of ferromagnetic order at low temperatures. Resonant tunneling diodes with (Ga,Mn)As showed features that are well explained by a simple physical picture.
KW - (Ga,Mn)As
KW - Ferromagnetic semiconductor
KW - Ferromagnetism
KW - Resonant tunneling
KW - Superlattices
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U2 - 10.1016/S0921-4526(98)00319-6
DO - 10.1016/S0921-4526(98)00319-6
M3 - Article
AN - SCOPUS:0032093360
VL - 249-251
SP - 809
EP - 813
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
ER -