Superior coefficient of two-dimensional electron gas in an In0.52Al0.48As/In0.53Ga0.47As modulation-doped structure by inserting a strained InAs quantum well

Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi, Takatomo Enoki, Kunihiro Arai

Research output: Contribution to journalConference articlepeer-review

Abstract

A detailed analysis based on Shubnikov-de Haas measurement was made on the effective mass of a two dimensional electron gas (2DEG)in an InAs-inserted channel InAlAs/InGaAs modulation-doped (MD) structure. The measured effective mass of the InAs-inserted channel inverted MD structure was found to be 0.044 m0 when ns = 2.08×1012 cm-2. The effective mass of 2DEG in the InAs-inserted channel MD structure agreed well with the calculated value of the strained InAs layers on In0.53Ga0.47As. This indicated that almost all of the 2DEG formed in the strained InAs quantum well. The InAs-inserted channel MD structure improved the electron confinement, since the 2DEG was confined in the InAs quantum well having a thickness of 4 nm.

Original languageEnglish
Pages (from-to)404-407
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1995 Jan 1
Externally publishedYes
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: 1995 May 91995 May 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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