Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1T-TaS2-xSex

R. Ang, Y. Miyata, E. Ieki, Kosuke Nakayama, Takafumi Sato, Y. Liu, W. J. Lu, Y. P. Sun, Takashi Takahashi

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44 Citations (Scopus)

Abstract

We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) of layered chalcogenide 1T-TaS2-xSex to elucidate the electronic states especially relevant to the occurrence of superconductivity. We found a direct evidence for a Ta-5d-derived electron pocket associated with the superconductivity, which is fragile against a Mott-gap opening observed in the insulating ground state for S-rich samples. In particular, a strong electron-electron interaction-induced Mott gap driven by a Ta 5d orbital also exists in the metallic ground state for Se-rich samples, while finite ARPES intensity near the Fermi level likely originating from a Se 4p orbital survives, indicative of the orbital-selective nature of the Mott transition. Present results suggest that effective electron correlation and p-d hybridization play a crucial role to tune the superconductivity and Mott metal-insulator transition.

Original languageEnglish
Article number115145
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number11
DOIs
Publication statusPublished - 2013 Sep 30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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