Superconducting transistors using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs

Tatsushi Akazaki; Junsaku Nitta; Hideaki Takayanagi; Takatomo Enoki

doi:10.1088/0953-2048/9/4A/022

Superconducting transistors using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs

Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi, Takatomo Enoki

Research output: Contribution to journal › Article › peer-review

Abstract

A newly fabricated Josephson field effect transistor (JOFET) is coupled with a two-dimensional electron gas (2DEG) in a strained InAs quantum well inserted into an In_0.52Al_0.48As/In_0.53Ga_0.47As inverted modulation-doped structure with an HEMT-type gate. We indicate the improved characteristics of the JOFET with the HEMT-type gate, instead of the MIS-type gate. The superconducting critical current I_C as well as the junction's normal resistance R_N can be completely controlled via a gate voltage of about -1 V; this provides voltage gain over unity, the first time for a JOFET.

Original language	English
Pages (from-to)	A83-A86
Journal	Superconductor Science and Technology
Volume	9
Issue number	4A
DOIs	https://doi.org/10.1088/0953-2048/9/4A/022
Publication status	Published - 1996 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0953-2048/9/4A/022

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@article{fab68b9cf15b4aed8d08abced196a73f,

title = "Superconducting transistors using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs",

abstract = "A newly fabricated Josephson field effect transistor (JOFET) is coupled with a two-dimensional electron gas (2DEG) in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure with an HEMT-type gate. We indicate the improved characteristics of the JOFET with the HEMT-type gate, instead of the MIS-type gate. The superconducting critical current IC as well as the junction's normal resistance RN can be completely controlled via a gate voltage of about -1 V; this provides voltage gain over unity, the first time for a JOFET.",

author = "Tatsushi Akazaki and Junsaku Nitta and Hideaki Takayanagi and Takatomo Enoki",

year = "1996",

month = jan,

day = "1",

doi = "10.1088/0953-2048/9/4A/022",

language = "English",

volume = "9",

pages = "A83--A86",

journal = "Superconductor Science and Technology",

issn = "0953-2048",

publisher = "IOP Publishing Ltd.",

number = "4A",

}

TY - JOUR

T1 - Superconducting transistors using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs

AU - Akazaki, Tatsushi

AU - Nitta, Junsaku

AU - Takayanagi, Hideaki

AU - Enoki, Takatomo

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A newly fabricated Josephson field effect transistor (JOFET) is coupled with a two-dimensional electron gas (2DEG) in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure with an HEMT-type gate. We indicate the improved characteristics of the JOFET with the HEMT-type gate, instead of the MIS-type gate. The superconducting critical current IC as well as the junction's normal resistance RN can be completely controlled via a gate voltage of about -1 V; this provides voltage gain over unity, the first time for a JOFET.

AB - A newly fabricated Josephson field effect transistor (JOFET) is coupled with a two-dimensional electron gas (2DEG) in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure with an HEMT-type gate. We indicate the improved characteristics of the JOFET with the HEMT-type gate, instead of the MIS-type gate. The superconducting critical current IC as well as the junction's normal resistance RN can be completely controlled via a gate voltage of about -1 V; this provides voltage gain over unity, the first time for a JOFET.

UR - http://www.scopus.com/inward/record.url?scp=22244462406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=22244462406&partnerID=8YFLogxK

U2 - 10.1088/0953-2048/9/4A/022

DO - 10.1088/0953-2048/9/4A/022

M3 - Article

AN - SCOPUS:22244462406

VL - 9

SP - A83-A86

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

SN - 0953-2048

IS - 4A

ER -

Superconducting transistors using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs

Abstract

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