Abstract
A newly fabricated Josephson field effect transistor (JOFET) is coupled with a two-dimensional electron gas (2DEG) in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure with an HEMT-type gate. We indicate the improved characteristics of the JOFET with the HEMT-type gate, instead of the MIS-type gate. The superconducting critical current IC as well as the junction's normal resistance RN can be completely controlled via a gate voltage of about -1 V; this provides voltage gain over unity, the first time for a JOFET.
Original language | English |
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Pages (from-to) | A83-A86 |
Journal | Superconductor Science and Technology |
Volume | 9 |
Issue number | 4A |
DOIs | |
Publication status | Published - 1996 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Ceramics and Composites
- Condensed Matter Physics
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry