Superconducting transistors using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs

Tatsushi Akazaki; Junsaku Nitta; Hideaki Takayanagi; Takatomo Enoki

doi:10.1088/0953-2048/9/4A/022

Superconducting transistors using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs

Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi, Takatomo Enoki

Research output: Contribution to journal › Article

Abstract

A newly fabricated Josephson field effect transistor (JOFET) is coupled with a two-dimensional electron gas (2DEG) in a strained InAs quantum well inserted into an In_0.52Al_0.48As/In_0.53Ga_0.47As inverted modulation-doped structure with an HEMT-type gate. We indicate the improved characteristics of the JOFET with the HEMT-type gate, instead of the MIS-type gate. The superconducting critical current I_C as well as the junction's normal resistance R_N can be completely controlled via a gate voltage of about -1 V; this provides voltage gain over unity, the first time for a JOFET.

Original language	English
Pages (from-to)	A83-A86
Journal	Superconductor Science and Technology
Volume	9
Issue number	4A
DOIs	https://doi.org/10.1088/0953-2048/9/4A/022
Publication status	Published - 1996 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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Akazaki, T., Nitta, J., Takayanagi, H., & Enoki, T. (1996). Superconducting transistors using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs. Superconductor Science and Technology, 9(4A), A83-A86. https://doi.org/10.1088/0953-2048/9/4A/022

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