Superconducting transistors using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs

Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi, Takatomo Enoki

Research output: Contribution to journalArticle

Abstract

A newly fabricated Josephson field effect transistor (JOFET) is coupled with a two-dimensional electron gas (2DEG) in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure with an HEMT-type gate. We indicate the improved characteristics of the JOFET with the HEMT-type gate, instead of the MIS-type gate. The superconducting critical current IC as well as the junction's normal resistance RN can be completely controlled via a gate voltage of about -1 V; this provides voltage gain over unity, the first time for a JOFET.

Original languageEnglish
Pages (from-to)A83-A86
JournalSuperconductor Science and Technology
Volume9
Issue number4A
DOIs
Publication statusPublished - 1996 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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