Superconducting thin films on Si. HTSCs meet VLSI

A. Inam, X. D. Wu, T. Venkatesan, D. M. Hwang, C. C. Chang, R. Ramesh, S. Miura, S. Matsubara, Y. Miyasaka, N. Shohata

Research output: Contribution to specialist publicationArticle

16 Citations (Scopus)

Abstract

The integration of high temperature superconductors (HTSCs) with conventional semiconductor-based technology would have important consequences for micro-electronics, with the promise of high performance hybrid circuits incorporating the best of what superconductors and semiconductors have to offer as well as the possibility for novel devices. Adding to the well known advantages of semiconductors, passive superconductive elements such as transmission lines offer the possibility of low loss, dispersionless signal transmission while active devices such as Josephson junctions make it possible to achieve very fast switching speeds with limited generation of heat. Film growth issues that limit the quality of (high temperature superconductor) HTSC thin films deposited directly on Si are discussed. Promising initial results-using intermediate (buffer) layers-represent a major step towards complete integration of HTSCs with Si and VLSI technology.

Original languageEnglish
Pages113-118
Number of pages6
Volume33
No.2
Specialist publicationSolid State Technology
Publication statusPublished - 1990 Feb 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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