Superconducting structures on narrow-gap semiconductors

H. Takayanagi, T. Akazaki, Junsaku Nitta

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Nb/n-type InAs/Nb superconducting devices with oxide-free interfaces are fabricated to study the interface effect on the superconducting characteristics of the device. The maximum supercurrent as well as the maximum supercurrent-normal resistance product is enhanced by RF sputter cleaning of the InAs surface. Using a device where Nb is deposited on InAs without breaking the vacuum, the carrier concentration dependence of the proximity-effect-induced pair potential is obtained. This dependence is consistent with the theory if some assumptions are made.

Original languageEnglish
Article number094
JournalSemiconductor Science and Technology
Issue number1S
Publication statusPublished - 1993 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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