Superconducting structures on narrow-gap semiconductors

H. Takayanagi, T. Akazaki, Junsaku Nitta

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Nb/n-type InAs/Nb superconducting devices with oxide-free interfaces are fabricated to study the interface effect on the superconducting characteristics of the device. The maximum supercurrent as well as the maximum supercurrent-normal resistance product is enhanced by RF sputter cleaning of the InAs surface. Using a device where Nb is deposited on InAs without breaking the vacuum, the carrier concentration dependence of the proximity-effect-induced pair potential is obtained. This dependence is consistent with the theory if some assumptions are made.

Original languageEnglish
Article number094
JournalSemiconductor Science and Technology
Volume8
Issue number1S
DOIs
Publication statusPublished - 1993 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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