Nb/n-type InAs/Nb superconducting devices with oxide-free interfaces are fabricated to study the interface effect on the superconducting characteristics of the device. The maximum supercurrent as well as the maximum supercurrent-normal resistance product is enhanced by RF sputter cleaning of the InAs surface. Using a device where Nb is deposited on InAs without breaking the vacuum, the carrier concentration dependence of the proximity-effect-induced pair potential is obtained. This dependence is consistent with the theory if some assumptions are made.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry