TY - JOUR
T1 - Superconducting properties and phase analysis of nb-si thin films produced by sputtering
AU - Ohshima, Shigetoshi
AU - Shiba, Takashi
AU - Kawanobe, Tadashi
AU - Wakiyama, Tokuo
PY - 1986/9
Y1 - 1986/9
N2 - Nb-Si films were deposited on Nb84 Si16, Ti3Au and W3Re films with an A15 structure by sputtering. The films with double layers were analyzed using Auger electron spectroscopy. Phase analyses of the sputtered Nb-Si films were carried out by X-ray diffraction studies. The A15 Nb.78Si.22 and Nb.75Si.25 films were grown epitaxially on Nb.84Si.16 and W3Re substrate films. The superconducting transition temperatures of these epitaxial films were found to range between 5 and 9 K.
AB - Nb-Si films were deposited on Nb84 Si16, Ti3Au and W3Re films with an A15 structure by sputtering. The films with double layers were analyzed using Auger electron spectroscopy. Phase analyses of the sputtered Nb-Si films were carried out by X-ray diffraction studies. The A15 Nb.78Si.22 and Nb.75Si.25 films were grown epitaxially on Nb.84Si.16 and W3Re substrate films. The superconducting transition temperatures of these epitaxial films were found to range between 5 and 9 K.
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U2 - 10.1143/JJAP.25.1336
DO - 10.1143/JJAP.25.1336
M3 - Article
AN - SCOPUS:0022774105
SN - 0021-4922
VL - 25
SP - 1336
EP - 1341
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 9 R
ER -