As-grown MgB2 thin films were synthesized at a low temperature of 270°C on an in-plane-lattice-near-matched TiZr buffer layer grown on Al2O3 - C substrate and Al2O3 substrate without buffer. The critical temperature (Tc), critical current density (Jc) and crystallinity of MgB2 on TiZr buffered substrates were found to be high compared with those of MgB2 on Al2O3; the improved Tc was around 35 K and Jc 6.6 × 105 A/cm2 at 5 K under the magnetic field of 1 T perpendicular to the film surface. The epitaxial relationship of MgB2 thin film on buffer layer was MgB2 [01 - 10] || TiZr[01 - 10] || Al2O3[11 - 20], but MgB 2 thin film without buffer layer had no epitaxial relationship.
- As-grown thin film
- Buffer layer
- Epitaxial growth
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering