Abstract
We investigated a superconductor-semiconductor-superconductor junction formed by two superconducting NbN electrodes and a two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure. We obtained a good ohmic contact between NbN/AuGeNi electrodes and 2DEG by annealing them at 450 °C for 1 min in an N2 atmosphere. We observed a decrease in the resistance caused by Andreev reflection (AR) within the superconducting energy gap voltage in a zero magnetic field in this structure. We found that the peculiar features of the magnetoresistance in the transition region can be qualitatively explained by considering the existence of the AR in high magnetic fields.
Original language | English |
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Pages (from-to) | 922-926 |
Number of pages | 5 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 12 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2002 Jan |
Externally published | Yes |
Event | 14th International Conference on the - Prague, Czech Republic Duration: 2001 Jul 30 → 2001 Aug 3 |
Keywords
- Andreev reflection
- Edge state
- Quantum Hall effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics