Superconducting Junctions using a 2DEG in a Strained InAs Quantum Well Inserted into an InAlAs/InGaAs MD Structure

Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi, Kunihiro Arai

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

A newly fabricated three-terminal Josephson Junction is coupled with a two-dimensional electron gas (2DEG) in a strained InAs quantum well inserted into an InAlAs/InGaAs modulation-doped structure. The 2DEG is confined in the InAs quantum well and has a maximum mobility of 155, 000 cm2/Vs at a sheet-carrier density of 1.86 x 1012cm-2at 10 K. The supercurrent flows through the 2DEG and can be controlled by adjusting the gate voltage. The critical current and normal resistance are measured as a function of the gate voltage, and the sheet-carrier density dependence of the critical current is obtained. We also measure the temperature dependence of the critical current at different gate voltages. The results indicate that, when using this junction, the superconducting characteristics can range between the clean and dirty limits.

Original languageEnglish
Pages (from-to)2887-2891
Number of pages5
JournalIEEE Transactions on Applied Superconductivity
Volume5
Issue number2
DOIs
Publication statusPublished - 1995 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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