Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD

Tadayoshi Yamashiro, Toshifumi Kikuchi, Makoto Ishii, Fumitaka Honma, Masao Sakuraba, Takashi Matsuura, Junichi Murota, Toshiaki Tsuchiya

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The fabrication process is investigated to improve the super self-aligned ultra-shallow junction electrode MOSFET (S3EMOSFET) by utilizing in-situ impurity-doped Si1-xGex selective epitaxy on the source/drain regions at 550 °C by means of LPCVD. It is found that phosphorus-doped Si1-xGex films with a high Ge fraction have low solid solubility of electrically active phosphorus, and boron-doped Si1-xGex films with a high Ge fraction have a low barrier height for tungsten. Therefore, both a Si1-xGex film with a low Ge fraction and one with a high Ge fraction are necessary to fabricate n- and p-MOSFETs with low contact resistivity. A super self-aligned process on the source/drain regions using selective in-situ-doped Si1-xGex growth, shallow junction formation, and subsequent very-low-temperature tungsten growth are effective in reducing the source/drain resistance. 0.1 μm gate pMOSFETs are fabricated by means of the super self-aligned technology. They show good drain current drivability and roll-off characteristics due to the suppression of parasitic source/drain resistance and the ultra-shallow source/drain layers.

Original languageEnglish
Pages (from-to)120-124
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume89
Issue number1-3
DOIs
Publication statusPublished - 2002 Feb 14

Keywords

  • Ge fraction
  • In-situ doped SiGe
  • SEMOSFET
  • Short channel effect
  • Tungsten

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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