Abstract
We have observed a remarkable decrease in photoluminescence (PL) from a blue-light emitting InGaN single-quantum-well (SQW) structure under the radiation of a green laser due to the stimulated emission depletion (STED) phenomenon. By extending the observed STED effect, super-resolution imaging of the blue-light emission lateral distribution was demonstrated for the InGaN-SQW structure through co-irradiation using a doughnut-shaped green light beam and a Gaussian-shaped violet excitation light beam. We measured point-spread functions (PSFs) to evaluate the spatial resolution of the system by imaging a small emission area. A lateral PSF size of ∼150 nm was confirmed, which was approximately 40% smaller than that without the STED beam. This demonstrates that the STED technique is applicable for PL imaging of semiconductor quantum structures. The present approach may make possible a new strategy for characterizing and investigating the spatial inhomogeneity of emission properties and carrier dynamics in InGaN-based quantum wells, as well as in other semiconductor materials exhibiting quantum confinement effects.
Original language | English |
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Pages (from-to) | 22575-22582 |
Number of pages | 8 |
Journal | Optics Express |
Volume | 22 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2014 Sep 22 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics