Super-low-k SiOCH film with sufficient film modulus and high thermal stability formed by using admixture precursor in neutral-beam-enhanced chemical vapor deposition

Akira Wada, Toru Sasaki, Shigeo Yasuhara, Seiji Samukawa

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

To fabricate a low-k-value interconnect film with a sufficient modulus and high thermal stability, we investigated using an admixture precursor (dimethoxytetramethyldisiloxane and methyltrimethoxysilane) in a neutral beam enhanced chemical vapor deposition (NBECVD) process. It was possible to precisely control the film properties because the NBECVD process can precisely control the molecular level structures, such as the composition ratio of linear and network/cage Si-O structures, by changing the precursor mixture ratio. Experimental results showed that the SiOCH low-k film had a super-low k-value of less than 2.1 and a sufficient modulus of more than 6 GPa. A high thermal stability was also achieved by stacking a 20-nm-thick methyltrimethoxysilane (MTMOS) cap layer on the NBECVD super-low-k film.

Original languageEnglish
Article number05EC01
JournalJapanese journal of applied physics
Volume51
Issue number5 PART 2
DOIs
Publication statusPublished - 2012 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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