Super clean sample of URu2Si2

Tatsuma D. Matsuda, Dai Aoki, Shugo Ikeda, Eetsuji Yamamoto, Yoshinori Haga, Hitoshi Ohkuni, Rikio Settai, Yoshichika Onuki

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We succeeded in growing a high-quality single crystal of URu 2Si2 by the Czochralski pulling method and applying the solid state electro-transport method under ultrahigh vacuum. The sample quality strongly depends on the position in the ingot. For some parts of this ingot, the electrical resistivity, specific heat and de Haas-van Alplhen effect were measured. The electrical resistivity of the surface sample clearly indicates a T-linear temperature dependence below 5 K. The mean free path in this sample was determined by the de Haas-van Alphen effect to be 11000 Å.

Original languageEnglish
Pages (from-to)362-364
Number of pages3
Journaljournal of the physical society of japan
Volume77
Issue numberSUPPL.A
Publication statusPublished - 2008 Jul 15

Keywords

  • Electrical resistivity
  • URuSi
  • dHvA

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Matsuda, T. D., Aoki, D., Ikeda, S., Yamamoto, E., Haga, Y., Ohkuni, H., Settai, R., & Onuki, Y. (2008). Super clean sample of URu2Si2. journal of the physical society of japan, 77(SUPPL.A), 362-364.