Sulfurization growth of CuInS2 thin film using ditertiarybutylsulfide as a less hazardous source

Mutsumi Sugiyama, Chika Fujiwara, Ryuki Shoji, Shigefusa Chichibu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Ditertiarybutylsulfide [(t-C4H9)2S: DTBS] was shown to be a promising, less hazardous alternative source for the sulfurization growth of CuInS2 films. Single-phase, polycrystalline CuInS2 films were formed in only 15 min when the sulfurization temperature was 575 °C. Photoluminescence spectra at a low temperature were dominated by characteristic emission bands at 1.34 and 1.37 eV, indicating that the films are a suitable material as a photoabsorbing layer of CuInS 2-based solar cells. These results represent the first step toward realizing a solar cell using a CuInS2 film grown by sulfurization using an organometallic source and conventional, large-scale equipment.

Original languageEnglish
Article number065503
JournalJapanese journal of applied physics
Volume50
Issue number6 PART 1
DOIs
Publication statusPublished - 2011 Jun 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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