Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies

T. Umebayashi, T. Yamaki, S. Yamamoto, A. Miyashita, S. Tanaka, T. Sumita, K. Asai

Research output: Contribution to journalArticlepeer-review

309 Citations (Scopus)

Abstract

Ion implantation and thermal annealing were used to in the synthesis of sulfur (S)-doped titanium oxide (TiO2). The irradiation damage was found to recovered by annealing at 600°C in air, according to the results of Rutherford backscattering spectroscopy and ion channeling analysis. The photon-to-carrier conversion was induced during irradiation by visible light above 420 nm.

Original languageEnglish
Pages (from-to)5156-5160
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number9
DOIs
Publication statusPublished - 2003 May 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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