An antirefiection/high-reflection (AR/HR) facet configuration was applied to a 1-5 μm DFB laser diode. As a result, a maximum output power of 45 mW was obtained. The diode was found to have high spectral stability under high-frequency modulation (side-mode suppression ratio > 30 dB). These results show that this configuration is a technique for high-performance DFB laser diodes.
- Optical communications
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering