Successful growth of inxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation

Yukinaga Azuma, Yoshito Nishijima, Kazuo Nakajima, Noritaka Usami, Kozo Fujiwara, Toru Ujihara

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We attempted to utilize a GaAs single crystal with preferential orientation as a seed to obtain an InGaAs single bulk crystal. The preferential orientation of the InGaAs bulk crystal was determined as [110] in a preliminary experiment to utilize multiple seed crystals with random orientations. By subsequent zone growth of InGaAs on GaAs(110), an IsxGa1-xAs (x > 0.18) single bulk crystal with a diameter of 15mm and a length of 13mm was successfully obtained on the seed without a compositionally graded InGaAs layer. The large lattice mismatch between GaAs and InGaAs was likely to be accommodated by an array of thin columnar grains at the interface.

Original languageEnglish
Pages (from-to)L907-L909
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number7 A
DOIs
Publication statusPublished - 2004 Jul 1

Keywords

  • GaAs(110) seed
  • InGaAc bulk crystal
  • MCZM method
  • Meltgrowth
  • Preferential orientation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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