Abstract
The subsurface defects in single diamond tool machined Si wafers were investigated by means of cross-sectional and plan view TEM, cross-sectional high-resolution TEM and preferential etching of the machined surface. The subsurface of machined samples consists of thin amorphous layer, layer with dislocations and shallow cracks, and separate deep, median and lateral cracks. As the results of the investigations have shown, the most promising (for less severe damage) is the single directional grinding with possibly small penetration depth of the diamond tool.
| Original language | English |
|---|---|
| Pages (from-to) | 1841-1846 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 196-201 |
| Issue number | pt 4 |
| DOIs | |
| Publication status | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: 1995 Jul 23 → 1995 Jul 28 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering