Subsurface damage in single diamond tool machined Si wafers

T. R. Mchedlidze, I. Yonenaga, K. Sumino

Research output: Contribution to journalConference articlepeer-review

18 Citations (Scopus)

Abstract

The subsurface defects in single diamond tool machined Si wafers were investigated by means of cross-sectional and plan view TEM, cross-sectional high-resolution TEM and preferential etching of the machined surface. The subsurface of machined samples consists of thin amorphous layer, layer with dislocations and shallow cracks, and separate deep, median and lateral cracks. As the results of the investigations have shown, the most promising (for less severe damage) is the single directional grinding with possibly small penetration depth of the diamond tool.

Original languageEnglish
Pages (from-to)1841-1846
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 4
DOIs
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 1995 Jul 231995 Jul 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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